PCP1103-TD-H Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 100mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -375mV.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.As you can see, the part has a transition frequency of 450MHz.Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.

PCP1103-TD-H Features

the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -375mV
the vce saturation(Max) is 375mV @ 15mA, 750mA
the emitter base voltage is kept at -5V
a transition frequency of 450MHz

PCP1103-TD-H Applications

There are a lot of ON Semiconductor PCP1103-TD-H applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting