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NSVBCP53-16T3G

NSVBCP53-16T3G

NSVBCP53-16T3G

ON Semiconductor

NSVBCP53-16T3G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

NSVBCP53-16T3G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingTape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Terminal Finish Tin (Sn)
Max Power Dissipation1.5W
Terminal Position DUAL
Terminal FormGULL WING
Reference Standard AEC-Q101
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 1.5W
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage80V
Transition Frequency 50MHz
Frequency - Transition 50MHz
Collector Base Voltage (VCBO) 100V
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:60122 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.411720$0.41172
10$0.388415$3.88415
100$0.366429$36.6429
500$0.345688$172.844
1000$0.326121$326.121

NSVBCP53-16T3G Product Details

NSVBCP53-16T3G Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 2V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.A transition frequency of 50MHz is present in the part.Maximum collector currents can be below 1.5A volts.

NSVBCP53-16T3G Features


the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 50MHz

NSVBCP53-16T3G Applications


There are a lot of ON Semiconductor NSVBCP53-16T3G applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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