FZT1051ATA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
FZT1051ATA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Voltage - Rated DC
60V
Max Power Dissipation
2.5W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
5A
Frequency
155MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
FZT1051A
Pin Count
4
Number of Elements
1
Element Configuration
Single
Power Dissipation
2.5W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
155MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
270 @ 1A 2V
Current - Collector Cutoff (Max)
10nA
Vce Saturation (Max) @ Ib, Ic
340mV @ 100mA, 5A
Collector Emitter Breakdown Voltage
40V
Transition Frequency
155MHz
Collector Emitter Saturation Voltage
340mV
Max Breakdown Voltage
40V
Collector Base Voltage (VCBO)
150V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
5A
Height
1.65mm
Length
6.7mm
Width
3.7mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.275147
$0.275147
10
$0.259573
$2.59573
100
$0.244880
$24.488
500
$0.231019
$115.5095
1000
$0.217942
$217.942
FZT1051ATA Product Details
FZT1051ATA Overview
This device has a DC current gain of 270 @ 1A 2V, which is the ratio between the collector current and the base current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 340mV, which allows maximum flexibilSingle BJT transistory in design.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 340mV @ 100mA, 5A.For high efficiency, the continuous collector voltage must be kept at 5A.The emitter base voltage can be kept at 5V for high efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 5A.As you can see, the part has a transition frequency of 155MHz.This device can take an input voltage of 40V volts before it breaks down.Collector current can be as low as 5A volts at its maximum.
FZT1051ATA Features
the DC current gain for this device is 270 @ 1A 2V a collector emitter saturation voltage of 340mV the vce saturation(Max) is 340mV @ 100mA, 5A the emitter base voltage is kept at 5V the current rating of this device is 5A a transition frequency of 155MHz
FZT1051ATA Applications
There are a lot of Diodes Incorporated FZT1051ATA applications of single BJT transistors.