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FZT1051ATA

FZT1051ATA

FZT1051ATA

Diodes Incorporated

FZT1051ATA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

FZT1051ATA Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC 60V
Max Power Dissipation 2.5W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 5A
Frequency 155MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number FZT1051A
Pin Count 4
Number of Elements 1
Element Configuration Single
Power Dissipation 2.5W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 155MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 270 @ 1A 2V
Current - Collector Cutoff (Max) 10nA
Vce Saturation (Max) @ Ib, Ic 340mV @ 100mA, 5A
Collector Emitter Breakdown Voltage 40V
Transition Frequency 155MHz
Collector Emitter Saturation Voltage 340mV
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 150V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 5A
Height 1.65mm
Length 6.7mm
Width 3.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.275147 $0.275147
10 $0.259573 $2.59573
100 $0.244880 $24.488
500 $0.231019 $115.5095
1000 $0.217942 $217.942
FZT1051ATA Product Details

FZT1051ATA Overview


This device has a DC current gain of 270 @ 1A 2V, which is the ratio between the collector current and the base current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 340mV, which allows maximum flexibilSingle BJT transistory in design.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 340mV @ 100mA, 5A.For high efficiency, the continuous collector voltage must be kept at 5A.The emitter base voltage can be kept at 5V for high efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 5A.As you can see, the part has a transition frequency of 155MHz.This device can take an input voltage of 40V volts before it breaks down.Collector current can be as low as 5A volts at its maximum.

FZT1051ATA Features


the DC current gain for this device is 270 @ 1A 2V
a collector emitter saturation voltage of 340mV
the vce saturation(Max) is 340mV @ 100mA, 5A
the emitter base voltage is kept at 5V
the current rating of this device is 5A
a transition frequency of 155MHz

FZT1051ATA Applications


There are a lot of Diodes Incorporated FZT1051ATA applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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