FJP5555TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
FJP5555TU Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
1.8g
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Published
2011
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
400V
Max Power Dissipation
75W
Current Rating
5A
Number of Elements
1
Element Configuration
Single
Power Dissipation
75W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
400V
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 800mA 3V
Vce Saturation (Max) @ Ib, Ic
1.5V @ 1A, 3.5A
Collector Emitter Breakdown Voltage
400V
Collector Emitter Saturation Voltage
1.5V
Collector Base Voltage (VCBO)
1.05kV
Emitter Base Voltage (VEBO)
14V
hFE Min
20
Height
16.51mm
Length
10.67mm
Width
4.83mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.517619
$0.517619
10
$0.488320
$4.8832
100
$0.460679
$46.0679
500
$0.434603
$217.3015
1000
$0.410003
$410.003
FJP5555TU Product Details
FJP5555TU Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 20 @ 800mA 3V DC current gain.As it features a collector emitter saturation voltage of 1.5V, it allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 1A, 3.5A.The base voltage of the emitter can be kept at 14V to achieve high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 5A current rating.A maximum collector current of 5A volts can be achieved.
FJP5555TU Features
the DC current gain for this device is 20 @ 800mA 3V a collector emitter saturation voltage of 1.5V the vce saturation(Max) is 1.5V @ 1A, 3.5A the emitter base voltage is kept at 14V the current rating of this device is 5A
FJP5555TU Applications
There are a lot of ON Semiconductor FJP5555TU applications of single BJT transistors.