NSVMMBT6517LT1G Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 50mA 10V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A maximum collector current of 100mA volts can be achieved.

NSVMMBT6517LT1G Features

the DC current gain for this device is 20 @ 50mA 10V
the vce saturation(Max) is 1V @ 5mA, 50mA

NSVMMBT6517LT1G Applications

There are a lot of ON Semiconductor NSVMMBT6517LT1G applications of single BJT transistors.

• Interface
• Muting
• Driver
• Inverter