Welcome to Hotenda.com Online Store!

logo
userjoin
Home

TK11A60D(STA4,Q,M)

TK11A60D(STA4,Q,M)

TK11A60D(STA4,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 11A TO-220SIS

SOT-23

TK11A60D(STA4,Q,M) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Tube
Published 2009
Series π-MOSVII
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 45W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 650m Ω @ 5.5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1550pF @ 25V
Current - Continuous Drain (Id) @ 25°C 11A Ta
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V
Rise Time 25ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 15 ns
Continuous Drain Current (ID) 11A
Gate to Source Voltage (Vgs) 30V
Radiation Hardening No
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
50 $2.15500 $107.75

Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News