IRFD014

new-10%

Manufacturer part number:IRFD014

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 60V 1.7A 4-DIP

Case Package:SOT-23

Datasheet:IRFD014 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	4-DIP (0.300, 7.62mm)
Number of Pins	4
Supplier Device Package	4-DIP, Hexdip, HVMDIP
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	1997
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Voltage - Rated DC	60V
Technology	MOSFET (Metal Oxide)
Current Rating	1.7A
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1.3W Ta
Power Dissipation	1.3W
Turn On Delay Time	10 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	200mOhm @ 1A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	310pF @ 25V
Current - Continuous Drain (Id) @ 25°C	1.7A Ta
Gate Charge (Qg) (Max) @ Vgs	11nC @ 10V
Rise Time	50ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	50 ns
Turn-Off Delay Time	13 ns
Continuous Drain Current (ID)	1.7A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	60V
Input Capacitance	310pF
Drain to Source Resistance	200mOhm
Rds On Max	200 mΩ
Height	3.37mm
Length	5mm
Width	6.29mm
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead