NTD25P03L1

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NTD25P03L1

Manufacturer part number:NTD25P03L1

Manufacturer:ON Semiconductor

Description:MOSFET P-CH 30V 25A IPAK

Case Package:SOT-23

Datasheet:NTD25P03L1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	OBSOLETE (Last Updated: 1 day ago)
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount	NO
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2006
JESD-609 Code	e0
Pbfree Code	no
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin/Lead (Sn80Pb20)
Additional Feature	LOGIC LEVEL COMPATIBLE
Subcategory	Other Transistors
Voltage - Rated DC	-30V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
Current Rating	-25A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	75W Tj
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	75W
Case Connection	DRAIN
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	80m Ω @ 25A, 5V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1260pF @ 25V
Current - Continuous Drain (Id) @ 25°C	25A Ta
Gate Charge (Qg) (Max) @ Vgs	20nC @ 5V
Rise Time	37ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4V 5V
Vgs (Max)	±15V
Fall Time (Typ)	16 ns
Turn-Off Delay Time	15 ns
Continuous Drain Current (ID)	25A
Gate to Source Voltage (Vgs)	15V
Drain-source On Resistance-Max	0.08Ohm
Drain to Source Breakdown Voltage	-30V
Pulsed Drain Current-Max (IDM)	75A
Avalanche Energy Rating (Eas)	200 mJ
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead