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NTD4806N-35G

NTD4806N-35G

NTD4806N-35G

ON Semiconductor

MOSFET N-CH 30V 11A IPAK

SOT-23

NTD4806N-35G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type Through Hole
Package / Case TO-251-3 Stub Leads, IPak
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Pin Count 3
Number of Elements 1
Power Dissipation-Max 1.4W Ta 68W Tc
Element Configuration Single
Power Dissipation 2.14W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2142pF @ 12V
Current - Continuous Drain (Id) @ 25°C 11.3A Ta 79A Tc
Gate Charge (Qg) (Max) @ Vgs 23nC @ 4.5V
Rise Time 23.8ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 11.5V
Vgs (Max) ±20V
Fall Time (Typ) 4.7 ns
Turn-Off Delay Time 26 ns
Continuous Drain Current (ID) 76A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.800728 $1.800728
10 $1.698800 $16.988
100 $1.602642 $160.2642
500 $1.511926 $755.963
1000 $1.426345 $1426.345

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