NTZS3151PT5G

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Manufacturer part number:NTZS3151PT5G

Manufacturer:ON Semiconductor

Description:MOSFET P-CH 20V 0.86A SOT-563

Case Package:SOT-23

Datasheet:NTZS3151PT5G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 4 days ago)
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Surface Mount	YES
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Voltage - Rated DC	-20V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	260
Current Rating	-860mA
[email protected] Reflow Temperature-Max (s)	40
Pin Count	6
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	170mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	170mW
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	150m Ω @ 950mA, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	458pF @ 16V
Current - Continuous Drain (Id) @ 25°C	860mA Ta
Gate Charge (Qg) (Max) @ Vgs	5.6nC @ 4.5V
Rise Time	12ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	23.7 ns
Continuous Drain Current (ID)	860mA
Gate to Source Voltage (Vgs)	8V
Drain-source On Resistance-Max	0.15Ohm
Drain to Source Breakdown Voltage	-20V
RoHS Status	RoHS Compliant
Lead Free	Lead Free