NTD4863NT4G

new-10%

Manufacturer part number:NTD4863NT4G

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 25V 9.2A DPAK

Case Package:SOT-23

Datasheet:NTD4863NT4G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Lifecycle Status	LAST SHIPMENTS (Last Updated: 1 day ago)
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount	YES
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2007
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	1.27W Ta 36.6W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.95W
Case Connection	DRAIN
Turn On Delay Time	11.5 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	9.3m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	990pF @ 12V
Current - Continuous Drain (Id) @ 25°C	9.2A Ta 49A Tc
Gate Charge (Qg) (Max) @ Vgs	13.5nC @ 4.5V
Rise Time	16.5ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	16.5 ns
Turn-Off Delay Time	20.2 ns
Continuous Drain Current (ID)	11.3A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	9.2A
Drain to Source Breakdown Voltage	25V
Pulsed Drain Current-Max (IDM)	98A
Avalanche Energy Rating (Eas)	60.5 mJ
Height	2.38mm
Length	6.73mm
Width	6.22mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free