NDS331N Description

The NDS331N is a high-cell density, DMOS N-channel logic level enhancement mode Field-Effect Transistor. This ultra-high-density method was specifically designed to reduce on-state resistance. The NDS331N transistor is designed for low-voltage applications such as PCMCIA cards and other battery-powered circuits that require fast switching and low in-line power loss in a tiny shape surface mount package.

NDS331N Features

• 1.3 A, 20 V. RDS(ON) = 0.21 W @ VGS= 2.7 V

• RDS(ON) = 0.16 W @ VGS= 4.5 V.

• Industry-standard outline SOT-23 surface-mount package using proprietary SuperSOTTM-3 design for superior thermal and electrical capabilities.

• High-density cell design for extremely low RDS(ON).

• Exceptional on-resistance and maximum DC current capability. 

NDS331N Applications

• Power Management

• Computers & Computer Peripherals

• Notebook computers

• Portable phones

• PCMCIA cards