IXTA18P10T

new-10%

Manufacturer part number:IXTA18P10T

Manufacturer:IXYS

Description:MOSFET P-CH 100V 18A TO-263

Case Package:SOT-23

Datasheet:IXTA18P10T Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	28 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2012
Series	TrenchP™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	83W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	120m Ω @ 9A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2100pF @ 25V
Current - Continuous Drain (Id) @ 25°C	18A Tc
Gate Charge (Qg) (Max) @ Vgs	39nC @ 10V
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±15V
Continuous Drain Current (ID)	18A
Drain-source On Resistance-Max	0.12Ohm
Pulsed Drain Current-Max (IDM)	60A
DS Breakdown Voltage-Min	100V
Avalanche Energy Rating (Eas)	200 mJ
RoHS Status	ROHS3 Compliant