IPD90N06S4L06ATMA2

new-10%

Manufacturer part number:IPD90N06S4L06ATMA2

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 60V 90A TO252-3

Case Package:SOT-23

Datasheet:IPD90N06S4L06ATMA2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Weight	3.949996g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	Automotive, AEC-Q101, OptiMOS™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Additional Feature	ULTRA-LOW RESISTANCE
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	79W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	10 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	6.3m Ω @ 90A, 10V
Vgs(th) (Max) @ Id	2.2V @ 40μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	5680pF @ 25V
Current - Continuous Drain (Id) @ 25°C	90A Tc
Gate Charge (Qg) (Max) @ Vgs	75nC @ 10V
Rise Time	3ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Fall Time (Typ)	8 ns
Turn-Off Delay Time	50 ns
Continuous Drain Current (ID)	90A
Gate to Source Voltage (Vgs)	16V
Max Dual Supply Voltage	60V
Avalanche Energy Rating (Eas)	67 mJ
Height	2.41mm
Length	6.73mm
Width	6.22mm
RoHS Status	ROHS3 Compliant