NTD5862N-1G

new-10%

Manufacturer part number:NTD5862N-1G

Manufacturer:ON Semiconductor

Description:MOSFET NFET IPAK 60V 102A 6MOHM

Case Package:SOT-23

Datasheet:NTD5862N-1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 22 hours ago)
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount	NO
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2012
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Form	THROUGH-HOLE
Pin Count	4
JESD-30 Code	R-PSIP-T3
Number of Elements	1
Power Dissipation-Max	115W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	115W
Case Connection	DRAIN
Turn On Delay Time	18 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	5.7m Ω @ 45A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	6000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	98A Tc
Gate Charge (Qg) (Max) @ Vgs	82nC @ 10V
Rise Time	70ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	60 ns
Turn-Off Delay Time	35 ns
Continuous Drain Current (ID)	98A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	90A
Drain-source On Resistance-Max	0.0057Ohm
Drain to Source Breakdown Voltage	60V
Pulsed Drain Current-Max (IDM)	335A
Avalanche Energy Rating (Eas)	205 mJ
Height	2.38mm
Length	6.73mm
Width	6.22mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free