NTJD4152PT1G

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Manufacturer part number:NTJD4152PT1G

Manufacturer:ON Semiconductor

Description:NTJD4152PT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NTJD4152PT1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	11 Weeks
Lifecycle Status	ACTIVE (Last Updated: 23 hours ago)
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Surface Mount	YES
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2000
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	215MOhm
Terminal Finish	Tin (Sn)
Subcategory	Other Transistors
Voltage - Rated DC	-20V
Max Power Dissipation	272mW
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	-880mA
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	NTJD4152P
Pin Count	6
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	272mW
Turn On Delay Time	5.8 ns
FET Type	2 P-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	260m Ω @ 880mA, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	155pF @ 20V
Gate Charge (Qg) (Max) @ Vgs	2.2nC @ 4.5V
Rise Time	6.5ns
Drain to Source Voltage (Vdss)	20V
Fall Time (Typ)	6.5 ns
Turn-Off Delay Time	13.5 ns
Continuous Drain Current (ID)	880mA
Threshold Voltage	-1.2V
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	0.88A
Drain to Source Breakdown Voltage	-20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	990.6μm
Length	2.1844mm
Width	1.3462mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free