NTHD4502NT1G

new-10%

Manufacturer part number:NTHD4502NT1G

Manufacturer:ON Semiconductor

Description:MOSFET 30V 3.9A Dual N-Channel

Case Package:SOT-23

Datasheet:NTHD4502NT1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	2 Weeks
Lifecycle Status	ACTIVE (Last Updated: 10 hours ago)
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Surface Mount	YES
Number of Pins	8
Weight	4.535924g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	80MOhm
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	30V
Max Power Dissipation	640mW
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
Current Rating	2.9A
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	NTHD4502N
Pin Count	8
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.13W
Turn On Delay Time	7.8 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	85m Ω @ 2.9A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	140pF @ 15V
Current - Continuous Drain (Id) @ 25°C	2.2A
Gate Charge (Qg) (Max) @ Vgs	7nC @ 10V
Rise Time	5.4ns
Fall Time (Typ)	5.4 ns
Turn-Off Delay Time	14.9 ns
Continuous Drain Current (ID)	3.9A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	-20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	1.1mm
Length	3.1mm
Width	1.7mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free