FDMD8240L         Description

  The device includes two 40V N-channel MOSFET in a dual power supply (3.3 mm x 5 mm) package. HS source and LS drain internal connections for half / full bridge, low source inductance packaging, low RDS (on) current / QG and FOM silicon.

FDMD8240L        Features

Max rDS(on) = 2.6 m|? at VGS = 10 V, ID = 23 A

Max rDS(on) = 3.95 m|? at VGS = 4.5 V, ID = 19 A

Ideal for Flexible Layout in Primary Side of Bridge Topology

100% UIL Tested

Kelvin High Side MOSFET Drive Pin-out Capability

Termination is Lead-free and RoHS Compliant

FDMD8240L        Applications

This product is general usage and suitable for many different applications.