FDS4935BZ

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FDS4935BZ

Manufacturer part number:FDS4935BZ

Manufacturer:ON Semiconductor

Description:FDS4935BZ datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDS4935BZ Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 day ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	187mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	22MOhm
Terminal Finish	Tin (Sn)
Additional Feature	ESD PROTECTION
Subcategory	Other Transistors
Voltage - Rated DC	-30V
Max Power Dissipation	1.6W
Terminal Form	GULL WING
Current Rating	-6.9A
Number of Elements	2
Number of Channels	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.6W
Turn On Delay Time	12 ns
Power - Max	900mW
FET Type	2 P-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	22m Ω @ 6.9A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1360pF @ 15V
Current - Continuous Drain (Id) @ 25°C	6.9A
Gate Charge (Qg) (Max) @ Vgs	40nC @ 10V
Rise Time	13ns
Drain to Source Voltage (Vdss)	30V
Fall Time (Typ)	13 ns
Turn-Off Delay Time	68 ns
Continuous Drain Current (ID)	-6.9A
Threshold Voltage	-1.9V
Gate to Source Voltage (Vgs)	25V
Drain to Source Breakdown Voltage	-30V
Dual Supply Voltage	-30V
FET Technology	METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)	150°C
FET Feature	Logic Level Gate
Nominal Vgs	1.9 V
Height	1.75mm
Length	5mm
Width	4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free