NTLJF3117PTAG

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Manufacturer part number:NTLJF3117PTAG

Manufacturer:ON Semiconductor

Description:MOSFET PFET 20V 4.1A 106MO 2X2

Case Package:SOT-23

Datasheet:NTLJF3117PTAG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type	Surface Mount
Package / Case	6-WDFN Exposed Pad
Surface Mount	YES
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	6
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	710mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	710mW
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	100m Ω @ 2A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	531pF @ 10V
Current - Continuous Drain (Id) @ 25°C	2.3A Ta
Gate Charge (Qg) (Max) @ Vgs	6.2nC @ 4.5V
Rise Time	13.2ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	19.1 ns
Turn-Off Delay Time	13.7 ns
Continuous Drain Current (ID)	2.3A
Gate to Source Voltage (Vgs)	8V
Drain Current-Max (Abs) (ID)	3.3A
Drain-source On Resistance-Max	0.135Ohm
Drain to Source Breakdown Voltage	-20V
Pulsed Drain Current-Max (IDM)	20A
FET Feature	Schottky Diode (Isolated)
RoHS Status	RoHS Compliant
Lead Free	Lead Free