WPB4002

new-10%

Manufacturer part number:WPB4002

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 600V 23A TO3PB

Case Package:SOT-23

Datasheet:WPB4002 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tray
Published	2013
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Pin Count	2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.5W Ta 220W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	220W
Turn On Delay Time	42 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	360m Ω @ 11.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds	2200pF @ 30V
Current - Continuous Drain (Id) @ 25°C	23A Ta
Gate Charge (Qg) (Max) @ Vgs	84nC @ 10V
Rise Time	130ns
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	84 ns
Turn-Off Delay Time	234 ns
Continuous Drain Current (ID)	23A
JEDEC-95 Code	TO-247
Gate to Source Voltage (Vgs)	30V
Pulsed Drain Current-Max (IDM)	80A
DS Breakdown Voltage-Min	600V
Radiation Hardening	No
RoHS Status	RoHS Compliant