NTTFS4800NTAG

new-10%

NTTFS4800NTAG

Manufacturer part number:NTTFS4800NTAG

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 30V 5A 8WDFN

Case Package:SOT-23

Datasheet:NTTFS4800NTAG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 4 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerWDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	8
JESD-30 Code	S-XDSO-F5
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	860mW Ta 33.8W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	4.5W
Case Connection	DRAIN
Turn On Delay Time	11.1 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	20m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	964pF @ 15V
Current - Continuous Drain (Id) @ 25°C	5A Ta 32A Tc
Gate Charge (Qg) (Max) @ Vgs	16.6nC @ 10V
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 11.5V
Vgs (Max)	±20V
Turn-Off Delay Time	14 ns
Continuous Drain Current (ID)	8.3A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	5A
Drain-source On Resistance-Max	0.027Ohm
Pulsed Drain Current-Max (IDM)	57A
DS Breakdown Voltage-Min	30V
Avalanche Energy Rating (Eas)	36.6 mJ
Height	800μm
Length	3.15mm
Width	3.15mm
RoHS Status	RoHS Compliant
Lead Free	Lead Free