NTLUD3A260PZTBG

new-10%

Manufacturer part number:NTLUD3A260PZTBG

Manufacturer:ON Semiconductor

Description:IGBT Transistors POWER MOSFET 20V 2A 200 M

Case Package:SOT-23

Datasheet:NTLUD3A260PZTBG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 day ago)
Mounting Type	Surface Mount
Package / Case	6-UFDFN Exposed Pad
Surface Mount	YES
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2010
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	Other Transistors
Max Power Dissipation	500mW
Pin Count	6
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	800mW
Case Connection	DRAIN
Turn On Delay Time	17.4 ns
FET Type	2 P-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	200m Ω @ 2A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	300pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	4.2nC @ 4.5V
Rise Time	32.3ns
Drain to Source Voltage (Vdss)	20V
Fall Time (Typ)	74 ns
Turn-Off Delay Time	149 ns
Continuous Drain Current (ID)	1.3A
Gate to Source Voltage (Vgs)	8V
Drain Current-Max (Abs) (ID)	1.7A
Drain-source On Resistance-Max	0.2Ohm
DS Breakdown Voltage-Min	20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free