IRF7379TRPBF

new-10%

Manufacturer part number:IRF7379TRPBF

Manufacturer:Infineon Technologies

Description:MOSFET N/P-CH 30V 8-SOIC

Case Package:SOT-23

Datasheet:IRF7379TRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2004
Series	HEXFET®
JESD-609 Code	e3
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
Terminal Finish	Matte Tin (Sn)
Max Power Dissipation	2.5W
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	5.8A
Base Part Number	IRF7379PBF
Number of Elements	2
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
FET Type	N and P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	45m Ω @ 5.8A, 10V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	520pF @ 25V
Current - Continuous Drain (Id) @ 25°C	5.8A 4.3A
Gate Charge (Qg) (Max) @ Vgs	25nC @ 10V
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Continuous Drain Current (ID)	5.8A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.045Ohm
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	46A
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Standard
Height	1.4986mm
Length	4.9784mm
Width	3.9878mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free