NTMD4820NR2G

new-10%

Manufacturer part number:NTMD4820NR2G

Manufacturer:ON Semiconductor

Description:Dual N-Channel 30 V 27 mOhm 7.7 nC 1.28 W Silicon SMT Mosfet - SOIC-8

Case Package:SOT-23

Datasheet:NTMD4820NR2G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	2 Weeks
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Surface Mount	YES
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2007
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Max Power Dissipation	1.29W
Terminal Form	GULL WING
Base Part Number	NTMD4820N
Pin Count	8
Number of Elements	1
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.28W
Turn On Delay Time	9.4 ns
Power - Max	750mW
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	20m Ω @ 7.5A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	940pF @ 15V
Current - Continuous Drain (Id) @ 25°C	4.9A
Gate Charge (Qg) (Max) @ Vgs	7.7nC @ 4.5V
Rise Time	4ns
Fall Time (Typ)	4 ns
Turn-Off Delay Time	21 ns
Continuous Drain Current (ID)	6.4A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	4.9A
Drain-source On Resistance-Max	0.02Ohm
Drain to Source Breakdown Voltage	30V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	1.5mm
Length	5mm
Width	4mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free