NTMFS4119NT1G

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Manufacturer part number:NTMFS4119NT1G

Manufacturer:ON Semiconductor

Description:NTMFS4119NT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NTMFS4119NT1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	9 Weeks
Lifecycle Status	LAST SHIPMENTS (Last Updated: 5 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN, 5 Leads
Number of Pins	5
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Resistance	2.3MOhm
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	30V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	260
Current Rating	18A
[email protected] Reflow Temperature-Max (s)	40
Pin Count	5
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	900mW Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.3W
Case Connection	DRAIN
Turn On Delay Time	28 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.5m Ω @ 29A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4800pF @ 24V
Current - Continuous Drain (Id) @ 25°C	11A Ta
Gate Charge (Qg) (Max) @ Vgs	60nC @ 4.5V
Rise Time	26ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	40 ns
Turn-Off Delay Time	35 ns
Continuous Drain Current (ID)	30A
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	30V
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free