NTMFS4983NFT1G

new-10%

Manufacturer part number:NTMFS4983NFT1G

Manufacturer:ON Semiconductor

Description:MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 2.1m Ω @ 30A, 10V ±20V 3250pF @ 15V 47.9nC @ 10V 8-PowerTDFN

Case Package:SOT-23

Datasheet:NTMFS4983NFT1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 1 week ago)
Factory Lead Time	16 Weeks
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Surface Mount	YES
Number of Pins	5
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Pin Count	5
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1.7W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	13.5 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.1m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	2.3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	3250pF @ 15V
Current - Continuous Drain (Id) @ 25°C	22A Ta 106A Tc
Gate Charge (Qg) (Max) @ Vgs	47.9nC @ 10V
Rise Time	24.9ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	10.7 ns
Turn-Off Delay Time	28.7 ns
Continuous Drain Current (ID)	106A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	22A
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	320A
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free