NTMFS5832NLT1G

new-10%

Manufacturer part number:NTMFS5832NLT1G

Manufacturer:ON Semiconductor

Description:MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 4.2m Ω @ 20A, 10V ±20V 2700pF @ 25V 51nC @ 10V 8-PowerTDFN, 5 Leads

Case Package:SOT-23

Datasheet:NTMFS5832NLT1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 6 days ago)
Factory Lead Time	16 Weeks
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN, 5 Leads
Surface Mount	YES
Number of Pins	5
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Resistance	6.5MOhm
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Pin Count	5
Number of Elements	1
Power Dissipation-Max	3.1W Ta 96W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.1W
Turn On Delay Time	13 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	4.2m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2700pF @ 25V
Current - Continuous Drain (Id) @ 25°C	20A Ta 111A Tc
Gate Charge (Qg) (Max) @ Vgs	51nC @ 10V
Rise Time	24ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	8 ns
Turn-Off Delay Time	27 ns
Continuous Drain Current (ID)	20A
Threshold Voltage	1V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	40V
Pulsed Drain Current-Max (IDM)	443A
Height	1.1mm
Length	5.1mm
Width	6.1mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free