NTMFS5834NLT1G

new-10%

Manufacturer part number:NTMFS5834NLT1G

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 40V 13A SO-8FL

Case Package:SOT-23

Datasheet:NTMFS5834NLT1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 3 days ago)
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN, 5 Leads
Surface Mount	YES
Number of Pins	5
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2010
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Pin Count	5
Number of Elements	1
Power Dissipation-Max	3.6W Ta 107W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3W
Case Connection	DRAIN
Turn On Delay Time	10 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	9.3m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1231pF @ 20V
Current - Continuous Drain (Id) @ 25°C	14A Ta 75A Tc
Gate Charge (Qg) (Max) @ Vgs	24nC @ 10V
Rise Time	56.4ns
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	6.6 ns
Turn-Off Delay Time	17.4 ns
Continuous Drain Current (ID)	14A
Gate to Source Voltage (Vgs)	20V
Pulsed Drain Current-Max (IDM)	276A
DS Breakdown Voltage-Min	40V
Avalanche Energy Rating (Eas)	48 mJ
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free