NTP5862NG

new-10%

Manufacturer part number:NTP5862NG

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 60V TO-220-3

Case Package:SOT-23

Datasheet:NTP5862NG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	22 Weeks
Mounting Type	Through Hole
Package / Case	TO-220-3
Surface Mount	NO
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2013
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Max Power Dissipation	115W
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Number of Elements	1
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	115W
Case Connection	DRAIN
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	5.7m Ω @ 45A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	6000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	98A Tc
Gate Charge (Qg) (Max) @ Vgs	82nC @ 10V
Rise Time	70ns
Fall Time (Typ)	60 ns
Turn-Off Delay Time	35 ns
Continuous Drain Current (ID)	98A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	50A
Drain-source On Resistance-Max	0.0057Ohm
Drain to Source Breakdown Voltage	60V
Avalanche Energy Rating (Eas)	205 mJ
RoHS Status	ROHS3 Compliant