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SQ4961EY-T1_GE3

SQ4961EY-T1_GE3

SQ4961EY-T1_GE3

Vishay Siliconix

MOSFET DUAL P-CHAN 60V SO8

SOT-23

SQ4961EY-T1_GE3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Supplier Device Package 8-SO
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series Automotive, AEC-Q101, TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Number of Elements 2
Power Dissipation 3.3W
Turn On Delay Time 11 ns
Power - Max 3.3W
FET Type 2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs 85mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1140pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.4A Tc
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Rise Time 13ns
Drain to Source Voltage (Vdss) 60V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 36 ns
Continuous Drain Current (ID) 4.4A
Gate to Source Voltage (Vgs) 20V
FET Feature Standard
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.348653 $1.348653
10 $1.272315 $12.72315
100 $1.200296 $120.0296
500 $1.132355 $566.1775
1000 $1.068260 $1068.26

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