IRFI640G

new-10%

Manufacturer part number:IRFI640G

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 200V 9.8A TO220FP

Case Package:SOT-23

Datasheet:IRFI640G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack, Isolated Tab
Number of Pins	3
Supplier Device Package	TO-220-3
Weight	6.000006g
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	1997
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Voltage - Rated DC	200V
Technology	MOSFET (Metal Oxide)
Current Rating	9.8A
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	40W Tc
Element Configuration	Single
Power Dissipation	40W
Turn On Delay Time	14 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	180mOhm @ 5.9A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C	9.8A Tc
Gate Charge (Qg) (Max) @ Vgs	70nC @ 10V
Rise Time	51ns
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	36 ns
Turn-Off Delay Time	45 ns
Continuous Drain Current (ID)	9.8A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	200V
Input Capacitance	1.3nF
Drain to Source Resistance	180mOhm
Rds On Max	180 mΩ
Height	9.8mm
Length	10.63mm
Width	4.83mm
Radiation Hardening	No
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead