NVHL025N65S3 Description

The all-new high voltage super-junction (SJ) NVHL025N65S3 MOSFET family from ON Semiconductor uses charge balance technology to achieve exceptional low on-resistance and lower gate charge performance. With this cutting-edge technology, conduction loss is reduced, switching performance is improved, and it can withstand highly high dv/dt rates. As a result, the NVHL025N65S3 MOSFET Easy-drive series makes design implementation simpler and aids in EMI management.

NVHL025N65S3 Features

• AEC?Q101 Qualified

• 100% Avalanche Tested

• Max Junction Temperature 150°C

• Typ. RDS(on) = 19.9 mΩ

• Ultra-Low Gate Charge (Typ. QG = 236 nC)

• Low Effective Output Capacitance (Typ. COSS(eff.) = 2062 pF)

• These Devices are Pb?Free and are RoHS Compliant

NVHL025N65S3 Applications

• Automotive PHEV?BEV DC?DC Converter

• Automotive Onboard Charger for PHEV?BEV

• HV DC/DC converter

• On-Board Charger