FDMA1032CZ

new-10%

Manufacturer part number:FDMA1032CZ

Manufacturer:ON Semiconductor

Description:MOSFET N/P-CH 20V MICROFET 2X2

Case Package:SOT-23

Datasheet:FDMA1032CZ Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Lifecycle Status	ACTIVE (Last Updated: 4 days ago)
Contact Plating	Gold
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-VDFN Exposed Pad
Number of Pins	6
Weight	40mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	PowerTrench®
JESD-609 Code	e4
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	68mOhm
Additional Feature	ESD PROTECTION
Subcategory	Other Transistors
Voltage - Rated DC	20V
Max Power Dissipation	1.4W
Current Rating	3.7A
Number of Elements	2
Number of Channels	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.4W
Case Connection	DRAIN
Power - Max	700mW
FET Type	N and P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	68m Ω @ 3.7A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	340pF @ 10V
Current - Continuous Drain (Id) @ 25°C	3.7A 3.1A
Gate Charge (Qg) (Max) @ Vgs	6nC @ 4.5V
Rise Time	11ns
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Fall Time (Typ)	11 ns
Turn-Off Delay Time	37 ns
Continuous Drain Current (ID)	3.7A
Threshold Voltage	1V
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	20V
Dual Supply Voltage	20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)	150°C
FET Feature	Logic Level Gate
Nominal Vgs	1 V
Height	850μm
Length	2mm
Width	2mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free