2N7002PV,115

new-10%

Manufacturer part number:2N7002PV,115

Manufacturer:Nexperia USA Inc.

Description:Dual N-Channel 60 V 330 mW 0.8 nC Silicon Surface Mount Mosfet - SOT-666

Case Package:SOT-23

Datasheet:2N7002PV,115 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Surface Mount	YES
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2010
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
Additional Feature	LOGIC LEVEL COMPATIBLE
Max Power Dissipation	330mW
Terminal Form	FLAT
Pin Count	6
Number of Elements	2
Operating Mode	ENHANCEMENT MODE
Power Dissipation	390mW
Turn On Delay Time	3 ns
Power - Max	330mW
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.6 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	2.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	50pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	0.8nC @ 4.5V
Rise Time	4ns
Fall Time (Typ)	5 ns
Turn-Off Delay Time	10 ns
Continuous Drain Current (ID)	350mA
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	60V
Drain Current-Max (Abs) (ID)	0.35A
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free