NVMFS5826NLT3G

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Manufacturer part number:NVMFS5826NLT3G

Manufacturer:ON Semiconductor

Description:Trans MOSFET N-CH 60V 8A Automotive 8-Pin SO-FL T/R

Case Package:SOT-23

Datasheet:NVMFS5826NLT3G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	38 Weeks
Lifecycle Status	ACTIVE, NOT REC (Last Updated: 3 days ago)
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Surface Mount	YES
Number of Pins	5
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2013
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	5
Number of Elements	1
Power Dissipation-Max	3.6W Ta 39W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.6W
Case Connection	DRAIN
Turn On Delay Time	9 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	24m Ω @ 10A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	850pF @ 25V
Current - Continuous Drain (Id) @ 25°C	8A Ta
Gate Charge (Qg) (Max) @ Vgs	17nC @ 10V
Rise Time	32ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	24 ns
Turn-Off Delay Time	15 ns
Continuous Drain Current (ID)	8A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	26A
Drain-source On Resistance-Max	0.032Ohm
DS Breakdown Voltage-Min	60V
Avalanche Energy Rating (Eas)	20 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free