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IRFBC30ASTRR

IRFBC30ASTRR

IRFBC30ASTRR

Vishay Siliconix

MOSFET N-CH 600V 3.6A D2PAK

SOT-23

IRFBC30ASTRR Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK
Weight 1.437803g
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 74W Tc
Element Configuration Single
Turn On Delay Time 9.8 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.2Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 510pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3.6A Tc
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Rise Time 13ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 3.6A
Gate to Source Voltage (Vgs) 30V
Input Capacitance 510pF
Drain to Source Resistance 2.2Ohm
Rds On Max 2.2 Ω
Height 4.83mm
Length 10.67mm
Width 9.65mm
RoHS Status Non-RoHS Compliant

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