NVMFS6H800NWFT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
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NVMFS6H800NWFT1G Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN, 5 Leads
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2015
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Terminal Finish
Tin (Sn)
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power Dissipation-Max
3.8W Ta 200W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
2.1m Ω @ 50A, 10V
Vgs(th) (Max) @ Id
4V @ 330μA
Input Capacitance (Ciss) (Max) @ Vds
5530pF @ 40V
Current - Continuous Drain (Id) @ 25°C
28A Ta 203A Tc
Gate Charge (Qg) (Max) @ Vgs
85nC @ 10V
Drain to Source Voltage (Vdss)
80V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
NVMFS6H800NWFT1G Product Details
NVMFS6H800NWFT1G Description
This N-Channel Logic Level MOSFET has been designed primarily to improve the overall efficiency of DC/DC converters with either synchronous or conventional switching PWM controllers. These MOSFETs switch more quickly and have a lower gate charge than other MOSFETs with comparable Rds(on) specifications. This results in MOSFETs that are easier to drive and safer (even at very high frequencies), as well as more effective DC/DC power supply systems. It has been optimized for low gate charge, low Ros(on), and rapid switching speed.
NVMFS6H800NWFT1G Features
? Compact Design with Small Footprint (5x6 mm)
? Reduced Conduction Losses through Low RDS(on)
? Reduce Driver Losses with Low QG and Capacitance
? Wettable Flank Option for Enhanced Optical Inspection (NVMFS6H800NWF)