NVMSD6N303R2G

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Manufacturer part number:NVMSD6N303R2G

Manufacturer:ON Semiconductor

Description:MOSFET NFET S08 30V 6A .024R TR

Case Package:SOT-23

Datasheet:NVMSD6N303R2G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Max Power Dissipation	2W
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	8
Reference Standard	AEC-Q101
JESD-30 Code	R-PDSO-G8
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	32m Ω @ 6A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	950pF @ 24V
Current - Continuous Drain (Id) @ 25°C	6A Ta
Gate Charge (Qg) (Max) @ Vgs	30nC @ 10V
Continuous Drain Current (ID)	6A
Drain Current-Max (Abs) (ID)	6A
Drain-source On Resistance-Max	0.032Ohm
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	30A
Avalanche Energy Rating (Eas)	325 mJ
FET Feature	Schottky Diode (Isolated)
RoHS Status	RoHS Compliant