KSE5740TU Overview
This device has a DC current gain of 200 @ 4A 5V, which is the ratio between the collector current and the base current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 8V.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 8A current rating.In extreme cases, the collector current can be as low as 8A volts.
KSE5740TU Features
the DC current gain for this device is 200 @ 4A 5V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 400mA, 8A
the emitter base voltage is kept at 8V
the current rating of this device is 8A
KSE5740TU Applications
There are a lot of ON Semiconductor KSE5740TU applications of single BJT transistors.
- Inverter
- Muting
- Driver
- Interface
