2SC4793(F,M)

new-10%

Manufacturer part number:2SC4793(F,M)

Manufacturer:Toshiba Semiconductor and Storage

Description:Transistor GP BJT NPN 230V 1A 3-Pin (3+Tab) TO-220(NIS)

Case Package:SOT-23

Datasheet:2SC4793(F,M) Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Contact Plating	Copper, Silver, Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Supplier Device Package	TO-220NIS
Operating Temperature	150°C TJ
Packaging	Tube
Published	2004
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Voltage - Rated DC	230V
Max Power Dissipation	2W
Current Rating	1A
Frequency	100MHz
Number of Elements	1
Polarity	NPN
Element Configuration	Single
Power Dissipation	2W
Power - Max	2W
Gain Bandwidth Product	100MHz
Transistor Type	NPN
Collector Emitter Voltage (VCEO)	230V
Max Collector Current	1A
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 100mA 5V
Current - Collector Cutoff (Max)	1μA ICBO
Vce Saturation (Max) @ Ib, Ic	1.5V @ 50mA, 500mA
Collector Emitter Breakdown Voltage	230V
Voltage - Collector Emitter Breakdown (Max)	230V
Current - Collector (Ic) (Max)	1A
Max Frequency	100MHz
Frequency - Transition	100MHz
Collector Base Voltage (VCBO)	230V
Emitter Base Voltage (VEBO)	5V
hFE Min	100
Continuous Collector Current	1A
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free