KSA614OTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSA614OTU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
KSA614
Power - Max
25W
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 500mA 5V
Current - Collector Cutoff (Max)
50μA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max)
55V
Current - Collector (Ic) (Max)
3A
KSA614OTU Product Details
KSA614OTU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 70 @ 500mA 5V.When VCE saturation is 500mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).TO-220-3 is the supplier device package for this product.There is a 55V maximal voltage in the device due to collector-emitter breakdown.
KSA614OTU Features
the DC current gain for this device is 70 @ 500mA 5V the vce saturation(Max) is 500mV @ 100mA, 1A the supplier device package of TO-220-3
KSA614OTU Applications
There are a lot of ON Semiconductor KSA614OTU applications of single BJT transistors.