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P2N2907AZL1G

P2N2907AZL1G

P2N2907AZL1G

ON Semiconductor

P2N2907AZL1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

P2N2907AZL1G Datasheet

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Specifications
Name Value
Type Parameter
Lifecycle Status OBSOLETE (Last Updated: 1 day ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Box (TB)
Published 2006
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature EUROPEAN PART NUMBER
Subcategory Other Transistors
Voltage - Rated DC -60V
Max Power Dissipation 625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Current Rating -600mA
[email protected] Reflow Temperature-Max (s) 40
Base Part Number P2N2907
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Transistor Application AMPLIFIER
Gain Bandwidth Product 200MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 1.6V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 10nA
Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA
Collector Emitter Breakdown Voltage 60V
Current - Collector (Ic) (Max) 600mA
Transition Frequency 200MHz
Collector Emitter Saturation Voltage -1.6V
Collector Base Voltage (VCBO) -60V
Emitter Base Voltage (VEBO) 5V
hFE Min 75
Turn Off Time-Max (toff) 110ns
Turn On Time-Max (ton) 50ns
RoHS Status RoHS Compliant
Lead Free Lead Free
P2N2907AZL1G Product Details

P2N2907AZL1G Overview


This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the collector current and the base current.The collector emitter saturation voltage is -1.6V, giving you a wide variety of design options.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -600mA.There is a transition frequency of 200MHz in the part.The maximum collector current is 600mA volts.

P2N2907AZL1G Features


the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of -1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
a transition frequency of 200MHz

P2N2907AZL1G Applications


There are a lot of ON Semiconductor P2N2907AZL1G applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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