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PN2222ARLRPG

PN2222ARLRPG

PN2222ARLRPG

ON Semiconductor

PN2222ARLRPG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

PN2222ARLRPG Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface MountNO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Box (TB)
Published 2007
JESD-609 Code e1
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Voltage - Rated DC 40V
Max Power Dissipation625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating600mA
Frequency 300MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number PN2222A
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation625mW
Transistor Application SWITCHING
Gain Bandwidth Product300MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Collector Emitter Breakdown Voltage40V
Transition Frequency 300MHz
Collector Emitter Saturation Voltage1V
Collector Base Voltage (VCBO) 75V
Emitter Base Voltage (VEBO) 6V
hFE Min 35
Turn Off Time-Max (toff) 285ns
Radiation HardeningNo
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:96372 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.09000$0.09
500$0.0891$44.55
1000$0.0882$88.2
1500$0.0873$130.95
2000$0.0864$172.8
2500$0.0855$213.75

PN2222ARLRPG Product Details

PN2222ARLRPG Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 10V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 50mA, 500mA.Keeping the emitter base voltage at 6V can result in a high level of efficiency.The current rating of this fuse is 600mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 300MHz.Single BJT transistor is possible for the collector current to fall as low as 600mA volts at Single BJT transistors maximum.

PN2222ARLRPG Features


the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 300MHz

PN2222ARLRPG Applications


There are a lot of ON Semiconductor PN2222ARLRPG applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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