SBCP56T1G Overview

DC current gain in this device equals 40 @ 150mA 2V, which is the ratio of the base current to the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.There is a transition frequency of 130MHz in the part.Maximum collector currents can be below 1A volts.

SBCP56T1G Features

the DC current gain for this device is 40 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 130MHz

SBCP56T1G Applications

There are a lot of ON Semiconductor SBCP56T1G applications of single BJT transistors.

• Muting
• Driver
• Inverter
• Interface