2N5657G Overview
In this device, the DC current gain is 30 @ 100mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.As it features a collector emitter saturation voltage of 1V, it allows for maximum design flexibility.When VCE saturation is 10V @ 100mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).With the emitter base voltage set at 6V, an efficient operation can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 3.7A.A transition frequency of 10MHz is present in the part.The maximum collector current is 500mA volts.
2N5657G Features
the DC current gain for this device is 30 @ 100mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 10V @ 100mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 3.7A
a transition frequency of 10MHz
2N5657G Applications
There are a lot of ON Semiconductor 2N5657G applications of single BJT transistors.
- Inverter
-
- Muting
-
- Interface
-
- Driver
-
