FJPF3305H1TU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 19 @ 1A 5V.As it features a collector emitter saturation voltage of 1V, it allows for maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 1A, 4A.If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.The current rating of this fuse is 4A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.A maximum collector current of 4A volts is possible.
FJPF3305H1TU Features
the DC current gain for this device is 19 @ 1A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 1A, 4A
the emitter base voltage is kept at 9V
the current rating of this device is 4A
FJPF3305H1TU Applications
There are a lot of ON Semiconductor FJPF3305H1TU applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
