RFP22N10

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Manufacturer part number:RFP22N10

Manufacturer:ON Semiconductor

Description:RFP22N10 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:RFP22N10 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	TO-220-3
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2002
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	100W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	80mOhm @ 22A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Current - Continuous Drain (Id) @ 25°C	22A Tc
Gate Charge (Qg) (Max) @ Vgs	150nC @ 20V
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V

Quantity	Unit Price	Ext. Price
1	$4.035712	$4.035712
10	$3.807276	$38.07276
100	$3.591770	$359.177
500	$3.388462	$1694.231
1000	$3.196662	$3196.662

RFP22N10 Description

The RFP22N10 is an N-Channel enhancement mode silicon gate power field effect transistor intended primarily for use with logic level (5V) driving sources in applications such as programmable controllers, automobile switching, and solenoid drivers. This capability is achieved using a unique gate oxide design that delivers full-rated conduction at gate biases ranging from 3V to 5V, allowing genuine on-off power management straight from logic circuit supply voltages.