BSP296L6327HTSA1

new-10%

Manufacturer part number:BSP296L6327HTSA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 100V 1.1A Automotive 4-Pin(3+Tab) SOT-223 T/R

Case Package:SOT-23

Datasheet:BSP296L6327HTSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2002
Series	SIPMOS®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Additional Feature	LOGIC LEVEL COMPATIBLE
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	4
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1.79W Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.79W
Case Connection	DRAIN
Turn On Delay Time	5.2 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	700m Ω @ 1.1A, 10V
Vgs(th) (Max) @ Id	1.8V @ 400μA
Input Capacitance (Ciss) (Max) @ Vds	364pF @ 25V
Current - Continuous Drain (Id) @ 25°C	1.1A Ta
Gate Charge (Qg) (Max) @ Vgs	17.2nC @ 10V
Rise Time	7.9ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	21.4 ns
Turn-Off Delay Time	37.4 ns
Continuous Drain Current (ID)	1.1A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.7Ohm
Radiation Hardening	No
RoHS Status	RoHS Compliant