FQA11N90C datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
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FQA11N90C Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2007
Series
QFET®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
FET General Purpose Power
Voltage - Rated DC
900V
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
11A
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
300W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
300W
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
1.1 Ω @ 5.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
3290pF @ 25V
Current - Continuous Drain (Id) @ 25°C
11A Tc
Gate Charge (Qg) (Max) @ Vgs
80nC @ 10V
Rise Time
130ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
85 ns
Turn-Off Delay Time
130 ns
Continuous Drain Current (ID)
11A
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
900V
Pulsed Drain Current-Max (IDM)
44A
Avalanche Energy Rating (Eas)
960 mJ
RoHS Status
RoHS Compliant
Lead Free
Lead Free
FQA11N90C Product Details
FQA11N90C Description
The FQA11N90C is a 900v N-channel QFET? enhancement-mode power MOSFET produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology FQA11N90C has been specially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. This FQA11N90C is suitable for switched-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.